STGWT60H65FB STMicroelectronics
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 65+ | 2.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STGWT60H65FB STMicroelectronics
Description: IGBT TRENCH FS 650V 80A TO-3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-3P, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 51ns/160ns, Switching Energy: 1.09mJ (on), 626µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Weitere Produktangebote STGWT60H65FB nach Preis ab 2.24 EUR bis 6.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STGWT60H65FB | Hersteller : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
STGWT60H65FB | Hersteller : STMicroelectronics |
IGBTs 650V 60A HSpd trench gate field-stop IGB |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
STGWT60H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
| STGWT60H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
|
|
STGWT60H65FB | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375W 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
STGWT60H65FB | Hersteller : STMicroelectronics |
Description: IGBT TRENCH FS 650V 80A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 51ns/160ns Switching Energy: 1.09mJ (on), 626µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 306 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
|||||||||||||||
| STGWT60H65FB | Hersteller : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
Produkt ist nicht verfügbar |