STGYA50M120DF3 STMicroelectronics
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.76 EUR |
| 10+ | 12.6 EUR |
| 30+ | 7.85 EUR |
| 120+ | 6.74 EUR |
| 510+ | 6.53 EUR |
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Technische Details STGYA50M120DF3 STMicroelectronics
Description: IGBT TRENCH FS 1200V 100A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 325 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A, Supplier Device Package: MAX247™, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 38ns/258ns, Switching Energy: 2mJ (on), 3.2mJ (off), Test Condition: 600V, 50A, 10Ohm, 15V, Gate Charge: 194 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 535 W.
Weitere Produktangebote STGYA50M120DF3 nach Preis ab 6.68 EUR bis 15.07 EUR
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STGYA50M120DF3 | Hersteller : STMicroelectronics |
 Description: IGBT TRENCH FS 1200V 100A MAX247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 325 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Supplier Device Package: MAX247™ IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/258ns Switching Energy: 2mJ (on), 3.2mJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 194 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 535 W |
auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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STGYA50M120DF3 | Hersteller : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 100A 535W 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STGYA50M120DF3 | Hersteller : STMicroelectronics |
STGYA50M120DF3 THT IGBT transistors |
Produkt ist nicht verfügbar |