STH12N120K5-2AG STMicroelectronics

Description: AUTOMOTIVE-GRADE N-CHANNEL 1200, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).