STH140N8F7-2 STMicroelectronics
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.53 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 1.94 EUR |
| 2000+ | 1.78 EUR |
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Technische Details STH140N8F7-2 STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2Pak-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V.
Weitere Produktangebote STH140N8F7-2 nach Preis ab 2.64 EUR bis 6.93 EUR
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STH140N8F7-2 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 80V 90A H2PAK-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V |
auf Bestellung 930 Stücke: Lieferzeit 10-14 Tag (e) |
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| STH140N8F7-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) H2PAK T/R |
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STH140N8F7-2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 80V 90A 3-Pin(2+Tab) H2PAK T/R |
Produkt ist nicht verfügbar |
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STH140N8F7-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 90A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V |
Produkt ist nicht verfügbar |