STH160N4LF6-2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 40V 120A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.76 EUR |
| 10+ | 2.49 EUR |
| 100+ | 2 EUR |
| 500+ | 1.64 EUR |
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Technische Details STH160N4LF6-2 STMicroelectronics
Description: MOSFET N-CH 40V 120A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: H2Pak-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V.
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STH160N4LF6-2 | Hersteller : STMicroelectronics |
MOSFET N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package |
auf Bestellung 540 Stücke: Lieferzeit 14-28 Tag (e) |
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STH160N4LF6-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8130 pF @ 20 V |
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