STH185N10F3-6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Automotive-grade N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
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Technische Details STH185N10F3-6 STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 315W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).
Weitere Produktangebote STH185N10F3-6
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STH185N10F3-6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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STH185N10F3-6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-6 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 315W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |