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STH245N75F3-6 STMicroelectronics

en.DM00114770.pdf
Hersteller: STMicroelectronics
Trans MOSFET N-CH 75V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
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Technische Details STH245N75F3-6 STMicroelectronics

Description: MOSFET N-CH 75V 180A H2PAK-6, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).

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STH245N75F3-6 STH245N75F3-6 STMicroelectronics en.DM00114770.pdf Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STH245N75F3-6 STH245N75F3-6 STMicroelectronics sth245n75f3-6-955961.pdf MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH245N75F3-6 en.DM00114770.pdf
STH245N75F3-6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 75V 180A H2PAK-6
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STH245N75F3-6 sth245n75f3-6-955961.pdf
STH245N75F3-6
Hersteller: STMicroelectronics
MOSFET Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH