STH320N4F6-6 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.95 EUR |
| 10+ | 5.95 EUR |
| 100+ | 4.24 EUR |
| 500+ | 4 EUR |
| 1000+ | 3.75 EUR |
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Technische Details STH320N4F6-6 STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: H2PAK-6, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab).
Weitere Produktangebote STH320N4F6-6 nach Preis ab 4.52 EUR bis 9.81 EUR
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STH320N4F6-6 | STMicroelectronics |
 Description: MOSFET N-CH 40V 200A H2PAK-6Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: H2PAK-6 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V |
auf Bestellung 915 Stücke: Lieferzeit 10-14 Tag (e) |
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| STH320N4F6-6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Description: MOSFET N-CH 40V 200A H2PAK-6
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
auf Bestellung 915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.81 EUR |
| 10+ | 6.53 EUR |
| 100+ | 4.68 EUR |
| 500+ | 4.52 EUR |