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STH400N4F6-2

STH400N4F6-2 STMicroelectronics


en.DM00060004-1223310.pdf
Hersteller: STMicroelectronics
MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET
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Technische Details STH400N4F6-2 STMicroelectronics

Description: MOSFET N-CH 40V 180A H2PAK-2, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V.

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STH400N4F6-2 STH400N4F6-2 Hersteller : STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STH400N4F6-2 STH400N4F6-2 Hersteller : STMicroelectronics en.DM00060004.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: H2Pak-2
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH