Technische Details STH400N4F6-2 STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: H2Pak-2, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V.
Weitere Produktangebote STH400N4F6-2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
STH400N4F6-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-2Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
STH400N4F6-2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK-2Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 404 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: H2Pak-2 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
