STI11NM80 STMicroelectronics

Description: MOSFET N-CH 800V 11A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.