STI18N65M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFET N-channel 650 V, 0.275 Ohm typ 12 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.98 EUR |
| 11+ | 4.81 EUR |
| 100+ | 3.95 EUR |
| 250+ | 3.87 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 2.81 EUR |
| 2000+ | 2.68 EUR |
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Technische Details STI18N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V.
Weitere Produktangebote STI18N65M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STI18N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) I2PAK Tube |
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| STI18N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) I2PAK Tube |
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| STI18N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 48A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 48A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.33Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STI18N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 12A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STI18N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 48A; 110W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 48A Power dissipation: 110W Case: I2PAK Gate-source voltage: ±25V On-state resistance: 0.33Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |