STI270N4F3

STI270N4F3 STMicroelectronics


dm00371555-2042207.pdf
Hersteller: STMicroelectronics
MOSFET N-Ch, 40V-2.1ohms 160A
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Technische Details STI270N4F3 STMicroelectronics

Description: MOSFET N-CH 40V 160A I2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA.

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STI270N4F3 STI270N4F3 Hersteller : STMicroelectronics en.CD00151537.pdf Description: MOSFET N-CH 40V 160A I2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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