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Technische Details STI270N4F3 STMicroelectronics
Description: MOSFET N-CH 40V 160A I2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Power Dissipation (Max): 330W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA.
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STI270N4F3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 160A I2PAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
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