STK184N4F7AG STMicroelectronics
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Technische Details STK184N4F7AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V.
Weitere Produktangebote STK184N4F7AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STK184N4F7AG | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 40V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| STK184N4F7AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 40V 100A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| STK184N4F7AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STK184N4F7AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 40 V, 1.6 mOhm typ., 100 A STripFET F7 Power MOSFET |
Produkt ist nicht verfügbar |