STK28N3LLH5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 28A POLARPAK
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PolarPak®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PolarPak®
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
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Technische Details STK28N3LLH5 STMicroelectronics
Description: MOSFET N-CH 30V 28A POLARPAK, Vgs (Max): ±22V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PolarPak®, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5.2W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PolarPak®, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote STK28N3LLH5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
STK28N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 28A POLARPAK Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PolarPak® Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5.2W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PolarPak® Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STK28N3LLH5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 28A POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PolarPak®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PolarPak®
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Description: MOSFET N-CH 30V 28A POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PolarPak®
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PolarPak®
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

