Weitere Produktangebote STL100N1VH5
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STL100N1VH5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 12V 100A POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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STL100N1VH5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 12V 100A POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |

