STL100N8F7 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6
| Anzahl | Preis |
|---|---|
| 1+ | 4.47 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.66 EUR |
| 1000+ | 1.64 EUR |
| 3000+ | 1.54 EUR |
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Technische Details STL100N8F7 STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V, Power Dissipation (Max): 4.8W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V.
Weitere Produktangebote STL100N8F7
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STL100N8F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 100A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
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STL100N8F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 100A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V Power Dissipation (Max): 4.8W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V |
Produkt ist nicht verfügbar |