STL10N60M6 STMicroelectronics
auf Bestellung 406 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.11 EUR |
| 16+ | 3.41 EUR |
| 100+ | 2.7 EUR |
| 250+ | 2.51 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 1.96 EUR |
| 3000+ | 1.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL10N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 5.5A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 660mOhm @ 2.75A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V.
Weitere Produktangebote STL10N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
STL10N60M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 5.5A 8-Pin Power Flat EP T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
|
| STL10N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 8-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
||
 |
STL10N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5.5A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
STL10N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5.5A PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.75A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 338 pF @ 100 V |
Produkt ist nicht verfügbar |