STL135N8F7AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.51 EUR |
| 6000+ | 2.41 EUR |
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Technische Details STL135N8F7AG STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V, Power Dissipation (Max): 4.8W (Ta), 135W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote STL135N8F7AG nach Preis ab 2.67 EUR bis 7.57 EUR
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STL135N8F7AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 80V 130A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V Power Dissipation (Max): 4.8W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8786 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 480A; 135W Mounting: SMD Case: PowerFLAT 5x6 Power dissipation: 135W Kind of package: reel; tape Pulsed drain current: 480A Drain-source voltage: 80V Drain current: 98A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
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| STL135N8F7AG | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 98A; Idm: 480A; 135W Mounting: SMD Case: PowerFLAT 5x6 Power dissipation: 135W Kind of package: reel; tape Pulsed drain current: 480A Drain-source voltage: 80V Drain current: 98A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |