STL13N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 3000+ | 1.32 EUR |
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Technische Details STL13N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 8A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V.
Weitere Produktangebote STL13N60DM2 nach Preis ab 1.41 EUR bis 4.51 EUR
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STL13N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 8A POWERFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 4A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V |
auf Bestellung 5781 Stücke: Lieferzeit 10-14 Tag (e) |
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STL13N60DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 |
auf Bestellung 3185 Stücke: Lieferzeit 10-14 Tag (e) |
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