STL13NM60N STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.56 EUR |
| 1000+ | 2.39 EUR |
| 3000+ | 2.24 EUR |
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Technische Details STL13NM60N STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 5A, 10V, Power Dissipation (Max): 3W (Ta), 90W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V.
Weitere Produktangebote STL13NM60N nach Preis ab 3.34 EUR bis 8.35 EUR
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STL13NM60N | STMicroelectronics |
 Description: MOSFET N-CH 600V 10A PWRFLAT HVPackaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 5A, 10V Power Dissipation (Max): 3W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
auf Bestellung 2626 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL13NM60N |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 2626 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.35 EUR |
| 10+ | 5.52 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.34 EUR |