STL15N60DM6 STMicroelectronics


stl15n60dm6.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 8.5A 8-Pin Power Flat EP T/R
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Technische Details STL15N60DM6 STMicroelectronics

Description: DISCRETE, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc), Rds On (Max) @ Id, Vgs: 372mOhm @ 3.8A, 10V, Power Dissipation (Max): 64W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V.

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STL15N60DM6 Hersteller : STMicroelectronics Description: DISCRETE
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 372mOhm @ 3.8A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 100 V
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STL15N60DM6 Hersteller : STMicroelectronics stl15n60dm6-1874740.pdf MOSFET N-channel 600 V, 295 mOhm typ 8.5 A MDmesh DM6 Power MOSFET in PowerFLAT 5x6 HV
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