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STL15N60M2-EP

STL15N60M2-EP STMicroelectronics


STL15N60M2-EP.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 418mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.1 EUR
Mindestbestellmenge: 3000
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Technische Details STL15N60M2-EP STMicroelectronics

Description: MOSFET N-CH 600V 7A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 418mOhm @ 4.5A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.

Weitere Produktangebote STL15N60M2-EP nach Preis ab 2.21 EUR bis 4.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STL15N60M2-EP STL15N60M2-EP Hersteller : STMicroelectronics STL15N60M2-EP.pdf Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 418mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.65 EUR
10+ 3.86 EUR
100+ 3.07 EUR
500+ 2.6 EUR
1000+ 2.21 EUR
Mindestbestellmenge: 6
STL15N60M2-EP STL15N60M2-EP Hersteller : STMicroelectronics 860331979770164dm002.pdf Trans MOSFET N-CH 600V 7A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
STL15N60M2-EP Hersteller : STMicroelectronics 860331979770164dm002.pdf Trans MOSFET N-CH 600V 7A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
STL15N60M2-EP STL15N60M2-EP Hersteller : STMicroelectronics stl15n60m2_ep-1851062.pdf MOSFET N-channel 600 V, 0.389 Ohm typ 7 A MDmesh M2 EP Power MOSFET
Produkt ist nicht verfügbar