STL17N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 90W (Tc)
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Technische Details STL17N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 10A PWRFLAT HV, Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 90W (Tc).
Weitere Produktangebote STL17N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL17N60M6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 300 mOhm typ., 10 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 p |
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