STL24N65M2 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 31+ | 4.8 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.31 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.76 EUR |
| 2000+ | 1.58 EUR |
| 3000+ | 1.46 EUR |
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Technische Details STL24N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 14A PWRFLAT HV, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL24N65M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL24N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 14A PWRFLAT HV Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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STL24N65M2 | Hersteller : STMicroelectronics | MOSFETs N-channel 650 V, 0.205 Ohm typ., 14 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 |
Produkt ist nicht verfügbar |