STL26N65DM2 STMicroelectronics
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.25 EUR |
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Technische Details STL26N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 20A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V.
Weitere Produktangebote STL26N65DM2
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STL26N65DM2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 20A 5-Pin Power Flat EP T/R |
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| STL26N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 20A 5-Pin Power Flat EP T/R |
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STL26N65DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 20A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 206mOhm @ 10A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL26N65DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.182 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 |
Produkt ist nicht verfügbar |
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| STL26N65DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 53A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 53A Power dissipation: 140W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 206mΩ Mounting: SMD Gate charge: 35.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |