STL28N60DM2 STMicroelectronics
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.25 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 2.96 EUR |
| 3000+ | 2.8 EUR |
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Technische Details STL28N60DM2 STMicroelectronics
Description: MOSFET N-CH 60V 21A PWRFLAT 8X8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote STL28N60DM2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| STL28N60DM2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 21A 5-Pin Power Flat EP T/R |
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| STL28N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A 5-Pin Power Flat EP T/R |
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| STL28N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A 4-Pin Power Flat EP T/R |
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| STL28N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 140W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STL28N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 21A PWRFLAT 8X8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 10.5A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STL28N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 140W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 84A Power dissipation: 140W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.175Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |