STL28N60M2

STL28N60M2 STMicroelectronics


enDM00431589.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V PWRFLAT 8X8
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
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Technische Details STL28N60M2 STMicroelectronics

Description: MOSFET N-CH 60V PWRFLAT 8X8, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 140W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerVDFN, Packaging: Tape & Reel (TR).

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STL28N60M2 Hersteller : STMicroelectronics stl28n60m2-1851247.pdf MOSFET N-channel 600 V, 0.140 Ohm typ 19 A MDmesh M2 Power MOSFET
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STL28N60M2 Hersteller : STMicroelectronics enDM00431589.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 72A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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