
STL305N4LF8AG STMicroelectronics

MOSFETs Automotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm, 305A STripFET F8
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.33 EUR |
10+ | 3.22 EUR |
25+ | 2.96 EUR |
100+ | 2.66 EUR |
250+ | 2.50 EUR |
500+ | 2.43 EUR |
1000+ | 2.34 EUR |
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Technische Details STL305N4LF8AG STMicroelectronics
Description: POWERFLAT 5X6 WF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STL305N4LF8AG nach Preis ab 2.47 EUR bis 4.42 EUR
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STL305N4LF8AG | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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STL305N4LF8AG | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 60A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Qualification: AEC-Q101 |
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