STL38N65M5 STMicroelectronics
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Technische Details STL38N65M5 STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 4-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V, Power Dissipation (Max): 2.8W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V.
Weitere Produktangebote STL38N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STL38N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 3.5A 5-Pin Power Flat T/R |
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STL38N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V PWRFLAT HV Packaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
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STL38N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL38N65M5 | Hersteller : STMicroelectronics |
MOSFETs N-CH 650V 0.09Ohm 22.5A Mdmesh M5 |
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| STL38N65M5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.5A; Idm: 90A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.5A Pulsed drain current: 90A Power dissipation: 150W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhancement |
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