STL3N10F7 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.4 EUR |
| 9000+ | 0.33 EUR |
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Technische Details STL3N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V, Power Dissipation (Max): 2.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (2x2), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V.
Weitere Produktangebote STL3N10F7 nach Preis ab 0.6 EUR bis 1.38 EUR
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STL3N10F7 | STMicroelectronics |
 Description: MOSFET N-CH 100V 4A POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL3N10F7 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
auf Bestellung 1922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 18+ | 1.21 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.6 EUR |