STL3N10F7 STMicroelectronics
auf Bestellung 4412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.50 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.34 EUR |
| 9000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL3N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V, Power Dissipation (Max): 2.4W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerFlat™ (2x2), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V.
Weitere Produktangebote STL3N10F7 nach Preis ab 0.50 EUR bis 1.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STL3N10F7 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 100V 4A POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V |
auf Bestellung 1922 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
STL3N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 4A 6-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| STL3N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 2.4W Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Case: PowerFLAT 2x2 Drain-source voltage: 100V Drain current: 4A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
STL3N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 4A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||
| STL3N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 2.4W Mounting: SMD Gate charge: 7.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Case: PowerFLAT 2x2 Drain-source voltage: 100V Drain current: 4A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |