STL3N65M2 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.39 EUR |
| 6000+ | 0.37 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details STL3N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V.
Weitere Produktangebote STL3N65M2 nach Preis ab 0.42 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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STL3N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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STL3N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 2.3A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STL3N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R |
auf Bestellung 30324 Stücke: Lieferzeit 14-21 Tag (e) |
|
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|
STL3N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R |
auf Bestellung 30324 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
STL3N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
|
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|
STL3N65M2 | STMicroelectronics |
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R |
auf Bestellung 710 Stücke: Lieferzeit 14-21 Tag (e) |
|
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STL3N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 1.6 Ohm typ 2.3 A MDmesh M2 Power MOSFET |
auf Bestellung 11658 Stücke: Lieferzeit 10-14 Tag (e) |
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STL3N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 2.3A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.48 EUR |
| 6000+ | 0.45 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.71 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
auf Bestellung 30324 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 215+ | 0.8 EUR |
| 241+ | 0.7 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.52 EUR |
| 6000+ | 0.5 EUR |
| 9000+ | 0.48 EUR |
| 24000+ | 0.46 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
auf Bestellung 30324 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 198+ | 0.87 EUR |
| 215+ | 0.77 EUR |
| 241+ | 0.67 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.46 EUR |
| 6000+ | 0.43 EUR |
| 9000+ | 0.42 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 178+ | 0.95 EUR |
| 204+ | 0.81 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
Trans MOSFET N-CH 650V 2.3A 8-Pin Power Flat EP T/R
auf Bestellung 710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 160+ | 1.07 EUR |
| 178+ | 0.89 EUR |
| 204+ | 0.75 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.6 Ohm typ 2.3 A MDmesh M2 Power MOSFET
MOSFETs N-channel 650 V, 1.6 Ohm typ 2.3 A MDmesh M2 Power MOSFET
auf Bestellung 11658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 1 EUR |
| 100+ | 0.74 EUR |
| 3000+ | 0.67 EUR |
| 6000+ | 0.65 EUR |
| 24000+ | 0.62 EUR |
| STL3N65M2 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.71 EUR |
| 50+ | 1.27 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |




