STL3N65M2 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 1 EUR |
| 100+ | 0.74 EUR |
| 3000+ | 0.67 EUR |
| 6000+ | 0.65 EUR |
| 24000+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL3N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V.
Weitere Produktangebote STL3N65M2 nach Preis ab 0.81 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STL3N65M2 | STMicroelectronics |
 Description: MOSFET N-CH 650V 2.3A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V |
auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STL3N65M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
Description: MOSFET N-CH 650V 2.3A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |