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STL42P4LLF6

STL42P4LLF6 STMicroelectronics

en.DM00101797.pdf
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.13 EUR
6000+1.06 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STL42P4LLF6 STMicroelectronics

Description: MOSFET P-CH 40V 42A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V.

Weitere Produktangebote STL42P4LLF6 nach Preis ab 1.02 EUR bis 4.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STL42P4LLF6 STL42P4LLF6 STMicroelectronics en.DM00101797.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 75W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 75W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.45 EUR
55+1.57 EUR
75+1.15 EUR
100+1.11 EUR
250+1.02 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 STL42P4LLF6 STMicroelectronics stl42p4llf6-1851163.pdf MOSFET P-channel 40 V, 0.0155 Ohm typ 42 A STripFET F6 Power MOSFET
auf Bestellung 11543 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.89 EUR
10+2.56 EUR
100+2.05 EUR
500+1.71 EUR
1000+1.46 EUR
3000+1.34 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 STL42P4LLF6 STMicroelectronics en.DM00101797.pdf Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 7551 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.02 EUR
10+2.57 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.27 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 STMicroelectronics STL42P4LLF6.pdf P-канальний ПТ, Udss, В = 40, Id = 42 А, Ptot, Вт = 75, Тип монт. = smd, Ciss, пФ @ Uds, В = 2850 @ 25, Qg, нКл = 22 @ 4,5 В, Rds = 18 мОм @ 5 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,5 В @ 250 мкА,... Транзистори Корпус: PowerVDFN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 27 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 en.DM00101797.pdf
STL42P4LLF6
Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -42A; Idm: -168A; 75W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -42A
Pulsed drain current: -168A
Power dissipation: 75W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
35+2.45 EUR
55+1.57 EUR
75+1.15 EUR
100+1.11 EUR
250+1.02 EUR
Mindestbestellmenge: 35 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 stl42p4llf6-1851163.pdf
STL42P4LLF6
Hersteller: STMicroelectronics
MOSFET P-channel 40 V, 0.0155 Ohm typ 42 A STripFET F6 Power MOSFET
auf Bestellung 11543 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.89 EUR
10+2.56 EUR
100+2.05 EUR
500+1.71 EUR
1000+1.46 EUR
3000+1.34 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 en.DM00101797.pdf
STL42P4LLF6
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 42A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 25 V
auf Bestellung 7551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.02 EUR
10+2.57 EUR
100+1.74 EUR
500+1.39 EUR
1000+1.27 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL42P4LLF6 STL42P4LLF6.pdf
Hersteller: STMicroelectronics
P-канальний ПТ, Udss, В = 40, Id = 42 А, Ptot, Вт = 75, Тип монт. = smd, Ciss, пФ @ Uds, В = 2850 @ 25, Qg, нКл = 22 @ 4,5 В, Rds = 18 мОм @ 5 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,5 В @ 250 мкА,... Транзистори Корпус: PowerVDFN-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 27 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH