STL45N60DM6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.094 Ohm typ., 25 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8
| Anzahl | Preis |
|---|---|
| 1+ | 11.92 EUR |
| 10+ | 7.57 EUR |
| 100+ | 6.02 EUR |
| 500+ | 5.68 EUR |
| 1000+ | 5.33 EUR |
| 3000+ | 5.23 EUR |
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Technische Details STL45N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 25A PWRFLAT HV, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerFlat™ (8x8) HV, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 160W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL45N60DM6
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STL45N60DM6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 25A PWRFLAT HV Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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STL45N60DM6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 25A PWRFLAT HV Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerFlat™ (8x8) HV Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
Produkt ist nicht verfügbar |