
STL45N60DM6 STMicroelectronics
auf Bestellung 2762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 10.89 EUR |
10+ | 8.10 EUR |
25+ | 8.08 EUR |
100+ | 6.16 EUR |
500+ | 5.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL45N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 25A PWRFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: PowerFlat™ (8x8) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Weitere Produktangebote STL45N60DM6
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() |
Produkt ist nicht verfügbar |
|
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() |
Produkt ist nicht verfügbar |
||
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 95A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: PowerFLAT 8x8 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 95A Drain current: 25A Power dissipation: 160W Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
|
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V |
Produkt ist nicht verfügbar |
|
STL45N60DM6 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 95A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Case: PowerFLAT 8x8 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 95A Drain current: 25A Power dissipation: 160W Gate-source voltage: ±25V |
Produkt ist nicht verfügbar |