STL4LN80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3A PWRFLAT VHV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6) VHV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 100 V
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Technische Details STL4LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 3A PWRFLAT VHV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.2A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6) VHV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 100 V.
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STL4LN80K5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 800 V, 2.1 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV |
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