STL50DN6F7 STMicroelectronics


en.DM00216100.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.09 EUR
6000+1.05 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STL50DN6F7 STMicroelectronics

Description: MOSFET 2N-CH 60V 57A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 62.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V, Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active.

Weitere Produktangebote STL50DN6F7 nach Preis ab 1.19 EUR bis 3.33 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STL50DN6F7 STL50DN6F7 STMicroelectronics stl50dn6f7-1850993.pdf MOSFETs Dual N-channel 60 V, 9 mOhm typ 57 A STripFET F7 Power MOSFET
auf Bestellung 6212 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.25 EUR
10+2.45 EUR
100+1.92 EUR
500+1.63 EUR
1000+1.32 EUR
3000+1.25 EUR
6000+1.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL50DN6F7 STL50DN6F7 STMicroelectronics en.DM00216100.pdf Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6104 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.33 EUR
10+2.48 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.29 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL50DN6F7 stl50dn6f7-1850993.pdf
Hersteller: STMicroelectronics
MOSFETs Dual N-channel 60 V, 9 mOhm typ 57 A STripFET F7 Power MOSFET
auf Bestellung 6212 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.25 EUR
10+2.45 EUR
100+1.92 EUR
500+1.63 EUR
1000+1.32 EUR
3000+1.25 EUR
6000+1.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STL50DN6F7 en.DM00216100.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
auf Bestellung 6104 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.33 EUR
10+2.48 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.29 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH