STL50N6F7

STL50N6F7 STMicroelectronics


stl50n6f7-1851046.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 60 V, 9 mOhm typ 60 A STripFET F7 Power MOSFET
auf Bestellung 3937 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.52 EUR
100+1.18 EUR
500+1 EUR
1000+0.81 EUR
3000+0.74 EUR
6000+0.73 EUR
Mindestbestellmenge: 2
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Technische Details STL50N6F7 STMicroelectronics

Description: MOSFET N-CH 60V 60A POWERFLAT, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 71W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc).

Weitere Produktangebote STL50N6F7 nach Preis ab 0.75 EUR bis 2.08 EUR

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STL50N6F7 STL50N6F7 Hersteller : STMicroelectronics stl50n6f7.pdf Description: MOSFET N-CH 60V 60A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
13+1.41 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
STL50N6F7 STL50N6F7 Hersteller : STMicroelectronics stl50n6f7.pdf Description: MOSFET N-CH 60V 60A POWERFLAT
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL50N6F7 Hersteller : STMicroelectronics stl50n6f7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; Idm: 240A; 71W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 60A
Power dissipation: 71W
Case: PowerFLAT 5x6
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Pulsed drain current: 240A
Kind of package: reel; tape
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH