STL60P4LLF6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET P-CH 40V 60A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.91 EUR |
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Technische Details STL60P4LLF6 STMicroelectronics
Description: MOSFET P-CH 40V 60A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: PowerFlat™ (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V.
Weitere Produktangebote STL60P4LLF6 nach Preis ab 0.93 EUR bis 3.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL60P4LLF6 | Hersteller : STMicroelectronics |
MOSFETs P-channel -40 V, 0.0115 Ohm typ -60 A STripFET F6 Power MOSFET |
auf Bestellung 1496 Stücke: Lieferzeit 10-14 Tag (e) |
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STL60P4LLF6 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 40V 60A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3525 pF @ 25 V |
auf Bestellung 3720 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL60P4LLF6 | Hersteller : STM |
MOSFET P-CH 40V 60A POWERFLAT Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| STL60P4LLF6 | Hersteller : STMicroelectronics |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -60A; Idm: -240A; 100W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -60A Power dissipation: 100W Case: PowerFLAT 5x6 On-state resistance: 14mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhancement Pulsed drain current: -240A Kind of package: reel; tape Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
