STL62P3LLH6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package
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Technische Details STL62P3LLH6 STMicroelectronics
Description: MOSFET P-CH 30V 62A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
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STL62P3LLH6 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 30V 62A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
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