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STL64DN4F7AG

STL64DN4F7AG STMicroelectronics


stl64dn4f7ag.pdf Hersteller: STMicroelectronics
MOSFETs Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
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Technische Details STL64DN4F7AG STMicroelectronics

Description: MOSFET 2N-CH 40V 40A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 57W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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STL64DN4F7AG Hersteller : STMicroelectronics stl64dn4f7ag.pdf Trans MOSFET N-CH 40V 40A Automotive 8-Pin Power Flat EP T/R
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STL64DN4F7AG Hersteller : STMicroelectronics stl64dn4f7ag.pdf Trans MOSFET N-CH 40V 40A Automotive 8-Pin Power Flat EP T/R
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STL64DN4F7AG STL64DN4F7AG Hersteller : STMicroelectronics stl64dn4f7ag.pdf Description: MOSFET 2N-CH 40V 40A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 57W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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STL64DN4F7AG Hersteller : STMicroelectronics stl64dn4f7ag.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 240A; 57W
Mounting: SMD
Gate charge: 9.8nC
On-state resistance: 8.5mΩ
Kind of package: reel; tape
Case: PowerFLAT 5x6
Type of transistor: N-MOSFET x2
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 40V
Power dissipation: 57W
Pulsed drain current: 240A
Polarisation: unipolar
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