STL64DN4F7AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.23 EUR |
| 3000+ | 1.06 EUR |
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Technische Details STL64DN4F7AG STMicroelectronics
Description: MOSFET 2N-CH 40V 40A POWERFLAT, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 57W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STL64DN4F7AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STL64DN4F7AG | STMicroelectronics |
Description: MOSFET 2N-CH 40V 40A POWERFLAT Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 57W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STL64DN4F7AG |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 40V 40A POWERFLAT
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 57W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 40A POWERFLAT
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 57W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH