
STL66N3LLH5 STMicroelectronics
auf Bestellung 523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.45 EUR |
10+ | 2.18 EUR |
100+ | 1.50 EUR |
500+ | 1.27 EUR |
1000+ | 1.04 EUR |
3000+ | 0.93 EUR |
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Technische Details STL66N3LLH5 STMicroelectronics
Description: MOSFET N-CH 30V 80A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 10V, Power Dissipation (Max): 72W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerFlat™ (5x6), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±22V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STL66N3LLH5
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STL66N3LLH5 | Hersteller : STMicroelectronics |
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STL66N3LLH5 | Hersteller : STMicroelectronics |
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STL66N3LLH5 | Hersteller : STMicroelectronics |
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STL66N3LLH5 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STL66N3LLH5 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 10V Power Dissipation (Max): 72W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |