STL6NM60N

Description: MOSFET N-CH 600V 5.75A POWERFLAT, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerFLAT™ (5x5), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 70W (Tc), Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).