STL70N4LLF5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.2 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.05 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.42 EUR |
| 3000+ | 1.33 EUR |
| 6000+ | 1.26 EUR |
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Technische Details STL70N4LLF5 STMicroelectronics
Description: MOSFET N-CH 40V 70A POWERFLAT, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±22V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerFlat™ (5x6), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 72W (Tc).
Weitere Produktangebote STL70N4LLF5 nach Preis ab 1.11 EUR bis 3.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STL70N4LLF5 | STMicroelectronics |
 Description: MOSFET N-CH 40V 70A POWERFLATPackage / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 1915 Stücke: Lieferzeit 10-14 Tag (e) |
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| STL70N4LLF5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 40V 70A POWERFLAT
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: MOSFET N-CH 40V 70A POWERFLAT
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 72W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 1915 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.28 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.11 EUR |