STL7DN6LF3 STMicroelectronics
auf Bestellung 5904 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4 EUR |
| 16+ | 3.33 EUR |
| 100+ | 2.65 EUR |
| 250+ | 2.47 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.9 EUR |
| 3000+ | 1.81 EUR |
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Technische Details STL7DN6LF3 STMicroelectronics
Description: MOSFET 2N-CH 60V 20A 5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 52W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A, Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V, Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerFlat™ (5x6).
Weitere Produktangebote STL7DN6LF3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STL7DN6LF3 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 60V 20A Automotive 8-Pin Power Flat T/R |
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| STL7DN6LF3 | Hersteller : STMicroelectronics |
STL7DN6LF3 SMD N channel transistors |
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STL7DN6LF3 | Hersteller : STMicroelectronics |
Description: MOSFET 2N-CH 60V 20A 5X6 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
Produkt ist nicht verfügbar |
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STL7DN6LF3 | Hersteller : STMicroelectronics |
Description: MOSFET 2N-CH 60V 20A 5X6 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 432pF @ 25V Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
Produkt ist nicht verfügbar |