STL7LN80K5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.12 EUR |
| 10+ | 2.66 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.48 EUR |
| 3000+ | 1.25 EUR |
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Technische Details STL7LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.
Weitere Produktangebote STL7LN80K5
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STL7LN80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 5A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
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STL7LN80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 5A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
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| STL7LN80K5 | Hersteller : STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 20A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 42W Case: PowerFLAT 5x6 On-state resistance: 1.15Ω Mounting: SMD Gate charge: 12nC Kind of channel: enhancement Pulsed drain current: 20A Kind of package: reel; tape Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
