STL7N6F7 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.42 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STL7N6F7 STMicroelectronics
Description: MOSFET N-CH 60V 7A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V, Power Dissipation (Max): 2.4W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (2x2), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.
Weitere Produktangebote STL7N6F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
STL7N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 7A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
STL7N6F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 60V 7A POWERFLATInput Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerFlat™ (2x2) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |

