STL7N80K5

STL7N80K5 STMicroelectronics


en.DM00100648.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 3.6A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.43 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STL7N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 3.6A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V.

Weitere Produktangebote STL7N80K5 nach Preis ab 1.52 EUR bis 3.73 EUR

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STL7N80K5 STL7N80K5 Hersteller : STMicroelectronics en.DM00100648.pdf MOSFETs N-Ch 800V .95Ohm typ 3.6A Zener-protected
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.56 EUR
10+2.62 EUR
100+2.01 EUR
500+1.74 EUR
1000+1.71 EUR
3000+1.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STL7N80K5 STL7N80K5 Hersteller : STMicroelectronics en.DM00100648.pdf Description: MOSFET N-CH 800V 3.6A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
auf Bestellung 5721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.7 EUR
100+2.03 EUR
500+1.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STL7N80K5 STL7N80K5 Hersteller : STMicroelectronics 175976752388412dm0010.pdf Trans MOSFET N-CH 800V 3.6A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
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STL7N80K5 Hersteller : STMicroelectronics 175976752388412dm0010.pdf Trans MOSFET N-CH 800V 3.6A 8-Pin Power Flat EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL7N80K5 Hersteller : STMicroelectronics en.DM00100648.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 14A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STL7N80K5 Hersteller : STMicroelectronics en.DM00100648.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 14A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH