STL8DN6LF6AG STMicroelectronics
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101
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Technische Details STL8DN6LF6AG STMicroelectronics
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 32A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 32A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 55W, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PowerFLAT, Anzahl der Pins: 8Pin(s), Produktpalette: STripFET F6 Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 55W, Betriebstemperatur, max.: 175°C.
Weitere Produktangebote STL8DN6LF6AG nach Preis ab 0.6 EUR bis 5.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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STL8DN6LF6AG | STMicroelectronics |
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101 |
auf Bestellung 2775 Stücke: Lieferzeit 14-21 Tag (e) |
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STL8DN6LF6AG | STMicroelectronics |
Description: MOSFET 2N-CH 32A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8DN6LF6AG | STMicroelectronics |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 32A; Idm: 128A; 55W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Pulsed drain current: 128A Power dissipation: 55W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2889 Stücke: Lieferzeit 14-21 Tag (e) |
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STL8DN6LF6AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohmtariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 32A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 55W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerFLAT Anzahl der Pins: 8Pin(s) Produktpalette: STripFET F6 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 55W Betriebstemperatur, max.: 175°C |
auf Bestellung 5266 Stücke: Lieferzeit 14-21 Tag (e) |
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STL8DN6LF6AG | STMicroelectronics |
MOSFETs Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFE |
auf Bestellung 3470 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8DN6LF6AG | STMicroelectronics |
Description: MOSFET 2N-CH 32A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8DN6LF6AG | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohmtariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 32A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 32A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 55W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerFLAT Anzahl der Pins: 8Pin(s) Produktpalette: STripFET F6 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 55W Betriebstemperatur, max.: 175°C |
auf Bestellung 5266 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 32A 8-Pin Power Flat EP T/R Automotive AEC-Q101
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 293+ | 0.6 EUR |
| STL8DN6LF6AG |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1 EUR |
| 6000+ | 0.93 EUR |
| 9000+ | 0.89 EUR |
| STL8DN6LF6AG |
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Hersteller: STMicroelectronics
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 32A; Idm: 128A; 55W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 55W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 32A; Idm: 128A; 55W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 55W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2889 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 2.14 EUR |
| 61+ | 1.42 EUR |
| 100+ | 1.19 EUR |
| STL8DN6LF6AG |
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Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 55W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 55W
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 55W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 55W
Betriebstemperatur, max.: 175°C
auf Bestellung 5266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.5 EUR |
| 107+ | 2.01 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.42 EUR |
| 5000+ | 1.32 EUR |
| STL8DN6LF6AG |
![]() |
Hersteller: STMicroelectronics
MOSFETs Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFE
MOSFETs Automotive-grade dual N-channel 60 V, 21 mOhm typ., 32 A STripFET F6 Power MOSFE
auf Bestellung 3470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 2.05 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.02 EUR |
| 3000+ | 0.89 EUR |
| 6000+ | 0.87 EUR |
| STL8DN6LF6AG |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.13 EUR |
| STL8DN6LF6AG |
![]() |
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 55W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 55W
Betriebstemperatur, max.: 175°C
Description: STMICROELECTRONICS - STL8DN6LF6AG - Dual-MOSFET, n-Kanal, 60 V, 60 V, 32 A, 32 A, 0.027 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 32A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 32A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 55W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerFLAT
Anzahl der Pins: 8Pin(s)
Produktpalette: STripFET F6 Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.027ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 55W
Betriebstemperatur, max.: 175°C
auf Bestellung 5266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 5.84 EUR |
| 67+ | 3.5 EUR |
| 107+ | 2.01 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.42 EUR |
| 5000+ | 1.32 EUR |





