
STL8N80K5 STMicroelectronics
auf Bestellung 2688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 4.58 EUR |
10+ | 3.68 EUR |
25+ | 3.63 EUR |
100+ | 2.68 EUR |
500+ | 2.24 EUR |
1000+ | 2.22 EUR |
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Technische Details STL8N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 4.5A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: PowerFlat™ (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V.
Weitere Produktangebote STL8N80K5 nach Preis ab 2.25 EUR bis 4.68 EUR
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STL8N80K5 | Hersteller : STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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STL8N80K5 | Hersteller : STMicroelectronics |
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STL8N80K5 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STL8N80K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.5A Power dissipation: 42W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 16.5nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STL8N80K5 | Hersteller : STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
Produkt ist nicht verfügbar |
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STL8N80K5 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.5A Power dissipation: 42W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 18A Gate charge: 16.5nC |
Produkt ist nicht verfügbar |