STLD125N4F6AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 40 V, 2.4 mOhm typ 120 A STripFET F6 Power MOSFET
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 3.70 EUR |
| 25+ | 3.59 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.69 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 2.20 EUR |
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Technische Details STLD125N4F6AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PowerFlat™ (5x6) Dual Side, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
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STLD125N4F6AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
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STLD125N4F6AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |