STLD125N4F6AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 40 V, 2.4 mOhm typ 120 A STripFET F6 Power MOSFET
auf Bestellung 2496 Stücke:
Lieferzeit 1014-1028 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.06 EUR |
| 10+ | 7.23 EUR |
| 100+ | 5.93 EUR |
| 500+ | 5.04 EUR |
| 1000+ | 4.24 EUR |
| 2500+ | 4.03 EUR |
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Technische Details STLD125N4F6AG STMicroelectronics
Description: MOSFET N-CH 40V 120A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PowerFlat™ (5x6) Dual Side, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V.
Weitere Produktangebote STLD125N4F6AG
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STLD125N4F6AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V |
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STLD125N4F6AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 40V 120A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Dual Side Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 10 V |
Produkt ist nicht verfügbar |