STO33N60M6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 25A TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TOLL (HV)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 7.66 EUR |
| 10+ | 6.44 EUR |
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Technische Details STO33N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 25A TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TOLL (HV), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V.
Weitere Produktangebote STO33N60M6 nach Preis ab 6.4 EUR bis 11.52 EUR
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auf Bestellung 1800 Stücke: Lieferzeit 112-126 Tag (e) |
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STO33N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 9-Pin(8+Tab) TO-LL T/R |
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| STO33N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 25A 9-Pin(8+Tab) TO-LL T/R |
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STO33N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 25A TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TOLL (HV) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V |
Produkt ist nicht verfügbar |